BRAND | Ixys Corporation |
Product | IXDN55N120D1 |
Description | single transistor |
Internal code | IMP4448677 |
Technical specification | Continuous collector current max. = 100 A collector emitter- = 1200 V gate-source voltage max. = ±20V Power dissipation max. = 450 W Case Sise=SOT-227B Mounting type = SMD Channel type = N number of pins = 4 switching speed = 1MHz Transistor configuration = easy Dimensions = 38.2 x 25.07 x 9.6mm Max. operating temperature = +150°C |
Please send us your request per e-mail, so we can send you our offer with competitive prices and delivery time for Ixys Corporation - IXDN55N120D1 single transistor number or any other model you need. We can offer competitive price, and delivery time with wide products distribution network in Croatia Industrial products Market.
WE SELL ONLY NEW AND ORIGINAL PRODUCTS!
bridge diode module
Discrete Semiconductor Module
Discrete semiconductor module
Bridge rectifier
bridge diode
Power Schottky Rectifier
High Voltage Standard Rectifier
Fast Recovery Epitaxial Diode (FRED)
Q3-Class HiperFETTM Power MOSFET
High Voltage Power MOSFET
diode
diode
diode
Discrete Semiconductor Module
Solid State Relay
Solid State Relay
Discrete Semiconductor Module
Transistor
Discrete Semiconductor Modul
IXYS BRIDGE DIODE MODULE
Module: diode; double series; 1.2kV; If: 2x270A; Y1-CU; V: Y1; screw
SOLID STATE RELAY SPDT 120mA 0-350V